| PART |
Description |
Maker |
| 2N6488 2N6491 2N6487 2N6490 ON0097 |
15AMPERE COMPLEMENTARY
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW |
Complementary NPN?PNP Power Bipolar Transistors
; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Power Bipolar Transistors
Complementary Power Transistors
|
ON Semiconductor
http://
|
| CMBT3904E10 CMBT3906E CMBT3904E-15 |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS
|
Central Semiconductor Corp
Central Semiconductor C...
|
| MJL21196 MJL21195 ON2056 |
STARTER KIT, EASY 500; Output type:Relay; Temp, op. max:55(degree C); Temp, op. min:-25(degree C) RoHS Compliant: Yes
COMPLEMENTARY SILICON POWER TRANSISTORS
16 AMPERE COMPLEMENTARY SILICON POWER
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| PE-53112NL PE-53113NL PE-52626 |
Inductors Designed for National’s 50 kHz Simple Switcher
Inductors Designed for Nationals 50 kHz Simple Switcher
|
Pulse A Technitrol Company
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| STK2030 STK2040 STK2050 STK2230 STK2240 STK2250 |
V(cc): -54V; 5A; 2-channel pure comlementary DPP
(STK2xxx) 2CH PURE COMPLEMENTARY D.P.P. SERIES
2CH PURE COMPLEMENTARY D.P.P. SERIES 2声道纯互补民进党系列
|
SANYO
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| MBS1230-22 MBS1205 MBS1205-22 MBS1210-22 MBS1215-2 |
Equipment Designed to Meet EMI Regulations Such As VCCI /CISPR /FCC /VDE /etc
Equipment Designed to Meet EMI Regulations Such As VCCICISPRFCCVDEetc
Equipment Designed to Meet EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc
|
LAMBDA[DENSEI-LAMBDA]
|
| RF1K49224 FN4330 |
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFETPower MOSFET
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET
From old datasheet system
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET
3.5A/2.5A/ 30V/ 0.060/0.150 Ohms/ Complementary LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
